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硒化鉍晶體 Bi2Se3（Bismuth Selenide）晶體尺寸：10毫米電學性能：拓撲絕緣體晶體結構：菱面體晶胞參數：a = b = 0.413, c = 2.856 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%
硒化鉍晶體 Bi2Se3(Bismuth Selenide)
晶體尺寸：10毫米
電學性能：拓撲絕緣體
晶體結構：菱面體
晶胞參數：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24
XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2Se3.
Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.
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