探測器以熱電冷卻的Si-Pin光電二極管作為X射線探測元器件,根據不同探測器類型和峰化時間,55Fe的5.9KeV峰值分辨率可達145eV;FASTSDD探測器峰值分辨率更可達122eV
探測器以熱電冷卻的Si-Pin光電二極管作為X射線探測元器件,根據不同探測器類型和峰化時間,55Fe的5.9KeV峰值分辨率可達145eV; FAST SDD 探測器峰值分辨率更可達122eV。
XR-100系列 探測器型號 | 探測器材料 | 探測器面積 | 探測器厚度 | 鈹(Be)窗 厚度 | 備注 |
XY-FSG32MD-G3SP | Si-PIN | 6 mm2 | 500 μm | 1 mil | 有內置準直器 |
XY-FS432MD-G3SP | Si-PIN | 13mm2 | 500 μm | 1 mil | 有內置準直器 |
XY-FSJ32MD-G3SP | Si-PIN | 25mm2 | 500 μm | 1 mil | 有內置準直器 |
XY-FSG32MD-G2SP | Si-PIN | 6mm2 | 500 μm | 0.5mil | 有內置準直器 |
XY-GSH3AMD-G2SP | SDD | 25mm2 | 500 μm | 0.5mil | 有內置準直器 |
XY-GSH3AMD-E1SP | SDD | 25mm2 | 500 μm | 0.3mil | 有內置準直器 |
XY-GSH3AMD-UOEA | SDD | 25mm2 | 500 μm | C1 Window | 有內置準直器 |
XY-GSH3AMD-E6EA | SDD | 25mm2 | 500 μm | C2 Window | 有內置準直器 |
XY-HSH3AMD-G2S | FAST SDD | 25mm2 | 500 μm | 0.5mil | 有內置準直器 |
XY-HSH3AMD-G1S | FAST SDD | 25mm2 | 500 μm | 0.3mil | 有內置準直器 |
XY-HSH3AMD-U0EA | FAST SDD | 25mm2 | 500 μm | C1 Window | 有內置準直器 |
XY-HSH3AMD-E6EA | FAST SDD | 25mm2 | 500 μm | C2 Window | 有內置準直器 |
** Silicon Drift Detector (SDD) uses a junction gate field-effect transistor (JFET) inside the hermetically sealed TO-8 package, along with an external preamplifier. FAST SDD uses a complementary metal-oxide-semiconductor () preamplifier inside the TO-8 package, and replaces the JFET with a metal-oxide-semiconductor field-effect transistor (MOSFET).
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